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NEC's NE687M03 NPN SILICON TRANSISTOR
FEATURES
* NEW M03 PACKAGE: * Smallest transistor outline package available * Low profile/0.59 mm package height * Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 14 GHz LOW NOISE FIGURE: NF = 1.4 dB at 2 GHz
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.20.05
0.80.1
* *
2
1.4 0.1 0.45 (0.9)
0.45
3
+0.1 0.3 -0
DESCRIPTION
NEC's NE687M03 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for very low voltage/low current designs for portable wireless communications and cellular radio applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE687 is also available in six different low cost plastic surface mount package styles.
1 +0.1 0.2 -0
0.590.05
+0.1 0.15 -0.05
PIN CONNECTIONS 1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS fT NF |S21E|2 hFE2 ICBO IEBO CRE3 PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz VCE = 1 V, IC = 3 mA, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz VCE = 1 V, IC = 10 mA, f = 2 GHz Forward Current Gain at VCE = 2 V, IC = 20 mA Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz A A pF 0.4 UNITS GHz GHz dB dB dB dB 8.5 6 70 MIN 9 7 NE687M03 2SC5436 M03 TYP 14 12 1.3 1.3 10 9.0 130 0.1 0.1 0.8 2 2 MAX
Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
California Eastern Laboratories
NE687M03 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 5 3 2 30 90 150 -65 to +150
ORDERING INFORMATION
PART NUMBER NE687M03-A NE687M03-T1-A QUANTITY
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25C)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE D.C. CURRENT GAIN vs. COLECTOR CURRENT
25
500
Collector Current, IC (mA)
20
15
180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A IB = 20 A
DC Current Gain, hFE
200 A
200
100 VCE = 1 V
VCE = 2 V
10
50
5
20
0
0
2.2
2.4
2.6
10
1
2
5
10
20
50
100
Collector to Emmiter Voltage, VCE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = 2V
Collector Current, IC (mA)
50
Collector Current, IC (mA)
40
30
20
10
0
0.5
1.0
Base to Emmiter Voltage, VBE (V)
NE687M03 NE687M03 NONLINEAR MODEL
SCHEMATIC
CCBPKG CCB
Q1
LCX
LBX Base
LB CCE
Collector
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 302.3e-18 104 1.038 10 0.370 1e-6 31.19 17.54 1.023 30 8.369e-3 81.93e-12 4.986 0.80 11.10 2.46 17e-3 4.477 0.415e-12 0.68 0.53 0.102e-12 0.8 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.53 0.27 0 0.75 0 0.37 5e-12 8 0.06 1.0 69.1 1.e-9 1.11 0 3 0 1
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
ADDITIONAL PARAMETERS
Parameters CCB CCE LB LE CCBPKG CCEPKG LBX LCX LEX 687M03 0.26e-12 0.19e-12 0.4e-9 0.7e-9 0.08e-12 0.08e-12 0.12e-9 0.10e-9 0.12e-9
MODEL TEST CONDITIONS Frequency: 0.1 to 5.0 GHz Bias: VCE = 0.5 V to 2.5 V, IC = 0.5 mA to 30 mA Date: 11/98 hFE = 108 at 2 V, 20 mA
(1) Gummel-Poon Model
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/26/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279
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Restricted Substance per RoHS Lead (Pb) Mercury Cadmium Hexavalent Chromium PBB PBDE Concentration Limit per RoHS (values are not yet fixed) < 1000 PPM < 1000 PPM < 100 PPM < 1000 PPM < 1000 PPM < 1000 PPM Concentration contained in CEL devices -A Not Detected Not Detected Not Detected Not Detected Not Detected Not Detected -AZ (*)
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